SLP20N50C mosfet equivalent, n-channel mosfet.
- 20A, 500V, RDS(on)typ. = 220mΩ@VGS = 10 V - Low gate charge ( typical 74.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
.
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These.
Image gallery
Download